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Durable T Flash Card Socket Hanxia HX TF PUSH with High Dielectric Strength and Electrical Properties

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Durable T Flash Card Socket Hanxia HX TF PUSH with High Dielectric Strength and Electrical Properties

Operating Temperature : -20℃~+70℃

Card Connection Mode : 自弹式

Rated Voltage (Max) : 5V

Height Above Board : 2mm

Card Detection :

Connector Type : 卡座

Card Type : MicroSD卡(TF卡)

Description : -20℃~+70℃ Push-Push 2mm Connector and Ejector MicroSD Card (TF Card) SMD PC Card Sockets RoHS

Mfr. Part # : HX TF PUSH

Package : SMD

Model Number : HX TF PUSH

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T-Flash Card Socket (HX TF PUSH)

This product specification defines the performance and testing methods for the T-FLASH card socket, designed and manufactured by Shenzhen Hanxia Electronic Co., Ltd. It is suitable for various electronic applications requiring a T-Flash card interface.

Product Attributes

  • Brand: HX
  • Origin: Shenzhen Hanxia Electronic Co., Ltd.
  • Certifications: RoHS compliant, UL498
  • Material: Follows RoHS directive requirements.

Technical Specifications

ItemRequirementsTest Methods
1. Confirmation of Product
2. Contact resistance (Low Level)100 m Max. initialSubject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max.
3. Insulation resistance1000 M Min.Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%).
4. Dielectric Strength500 V AC for 1 minute. Current leakage must be 1.0 mA max.Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301.
5. Durability (Repeated Mating/Unmating)Contact Resistance: 100 m Max. after testingMate and unmate connector for 5000 cycles.
6. Temperature rise30C Max.Carry rated current load. 0.3A per contact. (UL498)
7. Vibration Sinusoidal Low FrequencyNo electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance: 100 m max.Subject mated connector to 10-55-10 Hz traversed in 1 minute at 1.5 mm amplitude 2 hours each of 3 mutually perpendicular plane, 10 mA applied. MIL-STD-202, Method 201.
8. ShockNo electrical discontinuity greater than 1 sec. shall occur. No damage to product.Applying an appropriate holder is allowed in vibration test and shock test. MIL-STD-202, Method 213, 490m/s2, 3 axes.
9. Thermal shockNo damage, Contact Resistance (Low Level) (Final) 100 mmax.Temperature range from -55C to +85C. Start from -55C. After 30 min. change to +85C, change time is no more than 30 seconds. Total 5 cycles. MIL-STD-202, Method 107D, condition A.
10. HumidityNo damage, Contact Resistance (Low Level) (Final) 100 mmax. Dielectric Strength should be OK, Insulation Resistance should be 100 M min.Temperature :402C 96 hours. Relative humidity: 90-95%; Duration: 96 Hours. MIL-STD-202, Method 103.
11. SolderabilityAppearance of the specimen shall be inspected after the test with the assistance of a magnifier capable of giving a magnification of 10 X for any damage such as pinholes, void or rough surface.Soldering time: 3 to 5 Seconds Temperature: 2555C.
12. Resistance to soldering heatNo damageLeave subject product in the 2555C chamber for 2 minutes.
13. Salt SprayContact Resistance (Low Level) (Final) 100 mmax.51% salt concentration 244 hours 35 2C MIL-STD-202, Method 101 Condition B.
14. High temperatureContact resistance: 100 m max.Subject product to 852C for 96 hours continuously. MIL-STD-202, Method 108.

Reflow Soldering Profile

ParameterReference Specification
Average temperature gradient in preheating2.5C/s
Soak time tsoak2-3 minutes
Time above 217C t160 s
Time above 230C t250 s
Time above 255C t35 s
Peak temperature in reflow Tpeak255C (+5/-0C)
Temperature gradient in coolingMax -5C/s

2510131431_hanxia-HX-TF-PUSH_C5184837.pdf


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